2SC4650

Ordering number:EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET processes. Package Dimensions unit:mm 2064 [2SA1787/2SC4650] ( ) : 2SA1786 E : Emitter C : Collector B : Base Specifications SANYO : NMP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE fT Cob VCB=(–)150V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) IC=(–)20mA, IB=(–)2mA VBE(sat) IC=(–)20mA, IB=(–)2mA Ratings (–)200 (–)200 (–)5 (–)100 (–)200 1.0 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 60 150 (2.6) 1.7 (1.7) 1.2 max (–)0.1 (–)0.1 320 (–)0.6 (–)1.0 Unit µA µA MHz pF pF pF pF V V Any and all SANYO products described or contained herein ...