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2SC4644 Datasheet

Part Number 2SC4644
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC4644 Datasheet2SC4644 Datasheet (PDF)

Ordering number:EN3520 Features · Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colleto.

  2SC4644   2SC4644






Part Number 2SC4647
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4644 Datasheet2SC4647 Datasheet (PDF)

2SC4647 Silicon NPN Triple Diffused Application High voltage amplifier Features • High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 400 150 –55 to +150 Unit V V V mA mW .

  2SC4644   2SC4644







Part Number 2SC4646
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC4644 Datasheet2SC4646 Datasheet (PDF)

Ordering number:EN3512B Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Package Dimensions unit:mm 2064 [2SA1786/2SC4646] ( ) : 2SA1786 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Cu.

  2SC4644   2SC4644







Part Number 2SC4645
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC4644 Datasheet2SC4645 Datasheet (PDF)

Ordering number:ENN3511A Features · Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Package Dimensions unit:mm 2064A [2SA1785/2SC4645] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 1.0 0.9 1 0.6 0.5 23 0.45 ( ) : 2SA1785 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Coll.

  2SC4644   2SC4644







Part Number 2SC4643
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4644 Datasheet2SC4643 Datasheet (PDF)

2SC4643 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4643 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (T.

  2SC4644   2SC4644







NPN TRANSISTOR

Ordering number:EN3520 Features · Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob Cre VCE(sat) VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz IC=(–)50mA, IB=(–)5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)50mA, IB=(–)5mA E : Emitter C : Collector B : Base SANYO : NMP Ratings (–)400 (–)400 (–)5 (–)200 (–)400 1 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 60* 70 (5)4 (4)3 max (–)0.1 (–)0.1 200* (–0.8) 0.6 (–)1.0 Unit µA µA MHz pF pF V V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely .


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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