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2SC4628 Datasheet

Part Number 2SC4628
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4628 Datasheet2SC4628 Datasheet (PDF)

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 20 3 20 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base.

  2SC4628   2SC4628






Part Number 2SC4629
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4628 Datasheet2SC4629 Datasheet (PDF)

2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 600 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collecto.

  2SC4628   2SC4628







Part Number 2SC4627J
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC4628 Datasheet2SC4627J Datasheet (PDF)

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • Optimum for RF amplification of FM/AM radios • High transition frequency fT 12 (0.80) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) 5˚.

  2SC4628   2SC4628







Part Number 2SC4627G
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC4628 Datasheet2SC4627G Datasheet (PDF)

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification ■ Features ■ Package • Optimum for RF amplification of FM/AM radios • Code • High transition frequency fT SSMini3-F3 • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing / ■ Absolute Maximum Ratings Ta = 25°C • Marking Symbol: U • Pin Name 1. Base 2. Emitter 3. Collector Paramet.

  2SC4628   2SC4628







Part Number 2SC4627
Manufacturers GME
Logo GME
Description NPN High-frequency Transistor
Datasheet 2SC4628 Datasheet2SC4627 Datasheet (PDF)

Production specification NPN High-frequency Transistor FEATURES  Optimum for RF amplification of FM/AM radios. Pb Lead-free  High requency voltage fT.  SS-Mini type package,allowing downsizing of The equipment and automatic insertion through the type. APPLICATIONS  General purpose switching and amplification. ORDERING INFORMATION Type No. Marking 2SC4627 U 2SC4627 SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Co.

  2SC4628   2SC4628







NPN TRANSISTOR

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 20 3 20 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Gain bandwidth product Reverse transfer capacitance Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE fT Cre Min 20 20 — — 60 600 — Typ — — — — — — — Max — — 10 1 320 — 0.9 MHz pF Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 15 V, IE = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCB = 10 V, IC = 2 mA, f = 800 MHz Power gain Noise figure PG NF 10 — — — — 7.0 dB dB 2 2SC4628 Maximum Collector Dissipation Curve 300 Collector Power Dissipation PC (mW) 100 DC Current Transfer Ratio hFE VCE = 10 V 80 60 40 20 0 0 50 100 Ambient Temperature Ta (°C) 150 1 2 5 10 20 Collector Current IC (mA) 50 DC Current Transfer Ratio vs. Collector Current 200 100 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) VCE = 10 V 1600 Ceverse Transfer Capacitan.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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