2SC4616

SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4616 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Large current calcity (IC=2A) +0.2 9.70 -0.2 High blocking voltage(VCEO 400V) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 400 400 5 4 2 1 15 150 -55 to +150 Unit V V V A A W W 3 .8 0 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SC4616 Electrical Characteristics Ta = 25 Parameter Collector cut-off Current Emitter Cut-off Current DC Current Gain Gain-Bandwidth product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Output capacitance Turn-ON Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO cob ton Testconditons VCB=300V,IE=0 VEB=4V,IC=0 VCE=10V,IC=100mA VCE=10V,IC=100mA IC=500mA,IB=50mA IC=500mA,IB=50mA IC=10ìA,IE=0 IC=1mA,RBE= IE=10ìA,IC=0 VCB=30V,f=1MHz 400 400 5 15 40 60 Min Transistors Typ Max 1 1 200 Unit ìA ìA MHz 1 1 V V V V V pF 0.085 Storage Time tstg 4 ìs Fall Ti...