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2SC460 Datasheet

Part Number 2SC460
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC460 Datasheet2SC460 Datasheet (PDF)

2SC460, 2SC461 Silicon NPN Epitaxial Planar Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC460 30 30 5 100 200 150 –55 to +150 2SC461 30 30 5 .

  2SC460   2SC460






Part Number 2SC460
Manufacturers Renesas
Logo Renesas
Description Silicon NPN epitaxial planar type Transistor
Datasheet 2SC460 Datasheet2SC460 Datasheet (PDF)

2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 (Previous ADE-208-1046) Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage tempe.

  2SC460   2SC460







NPN TRANSISTOR

2SC460, 2SC461 Silicon NPN Epitaxial Planar Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC460 30 30 5 100 200 150 –55 to +150 2SC461 30 30 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C 2 2SC460, 2SC461 Electrical Characteristics (Ta = 25°C) 2SC460 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 1 2SC461 Max — — — 0.5 0.5 0.75 200 1.1 — 3.5 — — — Min 30 30 5 — — — 35 — — — — 13 — Typ — — — — — 0.63 — 0.6 230 1.8 — 17 — Max — — — 0.5 0.5 0.75 200 1.1 — 3.5 — — — V MHz pF dB dB dB Unit V V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IE = –1 mA f = 10.7 MHz VCE = 6 V, IE = –1 mA f = 100 MHz VCE = 6 V, IE = –1 mA f = 1MHz Rg = 500Ω Min 30 30 5 — — — 35 — — — 26 — — Typ — — — — — 0.63 — 0.6 230 1.8 29 — 2.0 Base to emitter voltage VBE DC current transfer rati.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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