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2SC4595
NPN Transistor
Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4595 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 2V, IC= 2A) ·Low Saturation
Voltage
- : VCE(sat)= 0.3V(Max)@ (IC= 6A, IB= 0.3A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati...
INCHANGE
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2SC4595
SILICON POWER TRANSISTOR
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