2SC458, 2SC2308
Silicon NPN Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SA1029 and 2SA10...
2SC458, 2SC2308
Silicon NPN Epitaxial
Application
Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC458, 2SC2308
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 30 30 5 100 –100 200 150 –55 to +150 2SC2308 55 50 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C
2
2SC458, 2SC2308
Electrical Characteristics (Ta = 25°C)
2SC458 Item Collector to base breakdown
voltage Collector to emitter breakdown
voltage Emitter to base breakdown
voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO
1
2SC2308 Max — — — 0.5 0.5 500 0.2 0.75 — 3.5 10 — — — — Min 55 50 5 — — 100 — — — — — — — — — Typ — — — — — — — 0.67 230 1.8 4 16.5 70 130 11.0 Max — — — 0.5 0.5 320 0.2 0.75 — 3.5 10 — — — — µS V V MHz pF dB kΩ × 10 –6 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 Ω VCE = 5V, IC = 0.1mA, f = 270 Hz
Min 30 30 5 — — 100 — — — — — — — — —
Typ — — — — — — — 0.67 230 1.8 4 16.5 70 130 11.0
DC curren...