2SC4579

Ordering number:EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4579] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 2.55 Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=10V, IC=1mA VCB=100V, f=1MHz IC=2mA, IB=0.4mA IC=2mA, IB=0.4mA 2.55 2.7 14.0 1 : Base 0.4 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Ratings 2000 900 5 20 60 1.75 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 20 50 6 1.6 max 1 1 120 5 2 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other...