isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4570
DESCRIPTION ·High Current-Gain—Bandwidth Product
fT= 5.5 ...
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4570
DESCRIPTION ·High Current-Gain—Bandwidth Product
fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB
0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in UHF oscillator and mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
20
V
VCEO Collector-Emitter
Voltage
12
V
VEBO
Emitter-Base
Voltage
3.0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
30
mA
0.12
W
125
℃
Tstg
Storage Temperature Range
-55~125
℃
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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4570
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5mA ; IB= 0.5mA
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 5mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 3V;f= 1.0MHz
︱S21e︱2 Insertion Power Gain
IC= 5mA ; VCE= 5V;f= 1.0GHz
MIN TYP. MAX UNIT
0.1 μA
0.1 μA
0.5
V
40
200
5.5
GHz
0.7 0.9 pF
5.0
dB
hFE Classification
Rank
T72
T73
T74
Marking T72
T73
T74
hFE
40-80 60-120 100-200...
