Ordering number:EN3140A
NPN Epitaxial Planar Silicon Transistors
2SC4521
High-Speed Switching Applications
Features
· ...
Ordering number:EN3140A
NPN Epitaxial Planar Silicon Transistors
2SC4521
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation
voltage. · Fast switching speed. · Small-sized package.
Package Dimensions
unit:mm 2038A
[2SC4521]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2× 0.8mm)
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings 60 45 5 3 6 1.5
150 –55 to +150
Unit V V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=45V, IE=0 VEB=2V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=3A VCE=2V, IC=500mA VCB=10V, f=1MHz
* : The 2SC4521 is classified by 500mA hFE as follows : 100 R 200 140 S 280 200 T 400 Marking : CL
hFE rank : R, S, T
Ratings min typ
100* 40
300 25
max 1
10 400*
Unit µA µA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabil...