2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching ...
2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High
Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C)
Symbol 2SC4518 2SC4518A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 5(Pulse10) 2.5 35(Tc=25°C) 150 –55 to +150 1000 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=–0.35A VCB=10V, f=1MHz
(Ta=25°C) 2SC4518 2SC4518A 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V V MHz pF Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
µA
13.0min
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.27 IB2 (A) –0.9 ton (µs) 0.7max tstg (µs) 4max tf (µs) 0.5max
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
5
0 70 mA
600mA
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation
Voltage V C E (s at) (V ) Base-Emitter Saturation
Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.
I C – V BE Temperature Characteristics (Typical)
5 (V CE =4V)
Collector Current I C (A)
250 mA
3
1.0 V B E (sat)
Collector Current I C (A) 0.5 1 5 10...