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2SC4460 Datasheet

Part Number 2SC4460
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistors
Datasheet 2SC4460 Datasheet2SC4460 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous.

  2SC4460   2SC4460






Part Number 2SC4460
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC4460 Datasheet2SC4460 Datasheet (PDF)

www.DataSheet.co.kr Ordering number:EN3331 NPN Triple Diffused Planar Silicon Transistor 2SC4460 500V/15A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4460] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto.

  2SC4460   2SC4460







Part Number 2SC4460
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 2SC4460 Datasheet2SC4460 Datasheet (PDF)

2SC4460 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package.  / Features ,,,。 High breakdown voltage ,high reliability, Fast switching speed, Wide ASO. / Applications 。 Switching regulator applications. / Equivalent Circuit / Pinning PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC4460 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Para.

  2SC4460   2SC4460







Silicon NPN Power Transistors

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 55 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4460 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4460 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.2A ; VCE= 5V hFE-2 DC Current Gain IC= 6A ; VCE= 5V  hFE-1 Classifications L M N 15-30 20-40 30-50 MIN.


2009-03-23 : BB505G    BB505B    LY2N-DC12    LY2N    IEC947-5-1    2SC4460    3AN80FI    K1542    CS48DV2B    AOU1N60   


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