2SC4453

Ordering number : ENN2812A 2SC4453 NPN Epitaxial Planar Silicon Transistor 2SC4453 High-Speed Switching Applications Features Fast switching speed. Low collector saturation voltage. High gain-bandwidth product. Small collector capacity. Ultrasmall-sized package permitting the 2SC4453- applied sets to be made small and slim. Package Dimensions unit : mm 2018B [2SC4453] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Marking : ST * : The 2SC4453 is classified by 5mA hFE as follows : Rank 2 3 4 hFE 50 to 100 70 to 140 100 to 200 Conditions VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings 40 40 15 5 200 500 40 200 150 --55 to +150 Unit V V V V mA mA mA mW °C °C min 50* Ratings typ max Unit 0.1 µA 0.1 µA 90 200* Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabi...