2SC4441

Ordering number:EN3794 NPN Triple Diffused Planar Silicon Transistor 2SC4441 Ultrahigh-Definition Monocuro Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast switching speed. · High breakdown voltage. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4441] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings 600 400 7 10 20 2.0 35 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) VCB=400V, IE=0 VCE=600V IC=100mA, IB=0 VEB=5V, IC=0 IC=6A, IB=1.2A IC=6A, IB=1.2A Ratings min typ 400 max 10 0.5 1 0.8 1.5 Unit µA mA V mA V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that r...