2SC4421

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4421 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.2 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4421 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 10 hFE-2 DC Current...