SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC4413
Features
Adoption of FBET process. High DC cur...
SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC4413
Features
Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation
voltage. High VEBO. Small Cob.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current(Pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 15 100 200 20 150 150 -55 to +150 Unit V V V mA mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-to-emitter saturation
voltage Base-to-emitter saturation
voltage Collector-to-base breakdown
voltage Collector-to-emitter breakdown
voltage Emitter-to-base breakdown
voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 40V, IE=0 VEB = 10V, IC=0 VCE = 5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V, f = 1MHz 800 1500 200 1.5 0.1 0.8 60 50 15 0.5 1.1 Min Typ Max 0.1 0.1 3200 MHz pF V V V V V Unit ìA ìA
VCE(sat) IC = 50mA , IB = 1mA VBE(sat) IC = 50mA , IB = 1mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0
Marking
Marking GY
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Free Datasheet http://www.datasheet4u.com/
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