Transistors
2SC4410
Silicon NPN epitaxial planar type
For UHF amplification
Unit: mm
(0.425)
0.3+–00..01
0.15+–00.....
Transistors
2SC4410
Silicon NPN epitaxial planar type
For UHF amplification
Unit: mm
(0.425)
0.3+–00..01
0.15+–00..0150
■ Features 3
Allowing the small current and low
voltage operation
1.25±0.10 2.1±0.1 5˚
High transition frequency fT
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.65) (0.65)
1.3±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.0±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base
voltage (Emitter open) VCBO
10
0.2±0.1
V
c e. d ty Collector-emitter
voltage (Base open) VCEO
7
V
n d stag tinue Emitter-base
voltage (Collector open) VEBO
2
0 to 0.1 0.9±0.1 0.9–+00..12
V
a e cle con Collector current
IC
10
mA
lifecy , dis Collector power dissipation
PC
50
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
10˚
EIAJ: SC-70
1: Base 2: Emitter 3: Collector SMini3-G1 Package
Marking Symbol: 2X
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.5 V, IC = 0
M is con inten Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
/Dis ma Transition frequency
fT
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
ce pe, Collector output capacitance
D ...
