SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4390
Features
Adoption of MBIT process. High DC curren...
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4390
Features
Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation
voltage (VCE(sat) 0.3V). 15V).
High VEBO (VEBO
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 20 10 15 2 4 0.4 500 150 -55 to +150 Unit V V V A A A mW
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1
Free Datasheet http://www.datasheet4u.com
SMD Type
2SC4390
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 15V, IE=0 VEB = 10V, IC=0 VCE =2V , IC = 500mA VCE = 10V , IC = 50mA VCB = 10V , f = 1.0MHz
Transistors
Min
Typ
Max 0.1 0.1
Unit ìA ìA
800
1500 260 280 0.11 0.87
3200 MHz pF 0.5 1.2 V V V V V
VCE(sat) IC = 1 A , IB = 20mA VBE(sat) IC = 1 A , IB = 20mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton 20 10 15
0.13
ìs
Storage time
tstg
0.8
ìs
Fall time
tf
0.1
ìs
2
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