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2SC4381
NPN Transistor
Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4381 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV ve...
INCHANGE
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