TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4325
2SC4325
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4325
2SC4325
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IB IC PC Tj Tstg
Rating
20 10 1.5 7 15 100 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz ¾ 13 ¾
dB 4.5 7.5 ¾ ¾ 1.4 ¾
dB ¾ 1.8 3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 7 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾ ¾ 50 ¾ ¾
¾ ¾ ¾ 0.45 0.35
1 1 250 ¾ 0.8
mA mA
pF pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
Marking
2SC4325
2 2003-03-19
2SC4325...