2SC4308

2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 30 20 3 300 500 600 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE fT Cob Min 30 20 — — 50 1.5 — Typ — — — — — 2.5 4.0 Max — — 1 10 200 — — GHz pF Unit V V µA µA Test conditions I C = 100 µA, IE = 0 I C = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4308 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 200 0 5 4. 3. 3.0 2.5 2.0 1.5 100 0.1 400 200 0.5mA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 1.0 2.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 1,000 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE VCE = 5 V Pulse Test Ta = 75°C 100 25 –25 10 ...