2SC4304

2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 900 V VCEO 800 V VEBO 7 V IC 3(Pulse6) A IB 1.5 A PC 35(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=–0.3A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 250 357 0.7 10 –5 0.1 IB2 (A) –0.35 ton (µs) 0.7max (Ta=25°C) Ratings Unit 100max µA 100max µA 800min V 10 to 30 0.5max V 1.2max V 15typ MHz 50typ pF tstg (µs) 4.0max tf (µs) 0.7max External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) I C– V CE Characteristics (Typical) 3 700mA 500mA 300mA 2 200mA 100mA 1 IB=50mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical) (IC/IB=5) VCE(sat) 2 –55˚C (Case Temp) 25˚C (Case...