2SC4296
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maxim...
2SC4296
Silicon NPN Triple Diffused Planar Transistor (High
Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4296 500 400 10 10(Pulse20) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=–0.7A VCB=10V, f=1MHz
(Ta=25°C) 2SC4296 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ V V MHz pF Unit
µA
V
23.0±0.3 9.5±0.2
µA
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 33 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.6 IB2 (A) –1.2 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
10
1.2 A
1A
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation
Voltage V C E (s a t) (V ) Base-Emitter Saturation
Voltage V B E (s at) (V ) 1.4 (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
10 (V CE =4V)
8 Collector Current I C (A)
600 mA
8 1 Collector Current I C (A)
6
400mA
6
mp )
V B E (sat)
emp
)
se T
(Ca
(Ca
25˚C
125
I B = 100mA...