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2SC4276 Datasheet

Part Number 2SC4276
Manufacturers Fuji Electric
Logo Fuji Electric
Description POWER TRANSISTOR
Datasheet 2SC4276 Datasheet2SC4276 Datasheet (PDF)

2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Coll.

  2SC4276   2SC4276






Part Number 2SC4276
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4276 Datasheet2SC4276 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VE.

  2SC4276   2SC4276







POWER TRANSISTOR

2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 15 5 80 +150 -55 to +150 Unit V V V A A W °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA ICEO = 0.2A IEBO = 1mA VCBO = 450V VEBO = 10V IC = 2A, VCE = 5V IC = 6A, IB = 1200mA IC = 7.5A, IB1 = 750mA IB2 = -1500mA, RL = 20 ohm Pw = 20µs Duty=<2% Min. 500 400 10 Typ. Max. Units V V V mA mA V V µs µs µs 25 0.1 0.1 65 0.8 1.2 1.0 2.5 0.5 Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. 1.56 Units °C/W 1 2S.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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