2SC4271

Ordering number:EN2710A Applications · Wide-band amplifiers. · High frequency drivers. Features · High fT (fT=2.2GHz typ) · High current (IC=300mA) · Adoption of FBET process. NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2009B [2SC7271] JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance ICBO IEBO hFE1 hFE2 fT Cob Cre VCB=20V, IE=0 VEB=2V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=300mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz * : The 2SC4271 is classified by 50mA hFE as follows : 40 C 80 60 D 120 100 E 200 1 : Emitter 2 : Collector 3 : Base Ratings 30 20 3 300 600 1.2 5 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ 40 20 2.2 3.9 3.2 max 0.1 5.0 200 Unit µA µA GHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or oth...