2SC4261
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
...
2SC4261
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC4261
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 15 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation
voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output
voltage Note: Marking is “QI–”. I EBO VCE(sat) hFE Cob fT VOSC Min 25 — — — — 50 — 1.8 — Typ — — — — — — 0.7 2.4 200 Max — 0.3 10 1.0 0.3 180 1.0 — — pF GHz mV Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 5 mA, f = 930 MHz
See characteristic curves of 2SC4196.
2
2SC4261
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 120 100 80 60 40 20
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.425
2.0 ± 0.2
0.1 0.3 + – 0.05
0.1 0.16 + – 0.06
1.25 ± 0.1
2.1 ± 0.3
0 – 0.1
0.2
0.9 ± 0.1
0.65 0.65 1.3 ± 0.2
0.425
0.1 0.3 + – 0.05
0.1 0.3 + – 0.05
Hitac...