2SC4230

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4230 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 1 A IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4230 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current At rated Voltage ICEO Collector Cutoff Current At rated Voltage IEBO Emitter Cutoff Current At rated Voltage hFE-1 DC Current Gain I...