2SC4219

Ordering number:EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features · High breakdown voltage, high reliability (VCEO≥400V). · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4219] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 9.4 0.8 0.4 Specifications 123 2.55 2.55 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Ratings 500 400 7 4 8 1.5 1.65 40 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO *hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=5V, IC=10mA 15 10 10 * : The hFE1 of the 2SC4219 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 15 L 30 20 M 40 30 N 50 max 10 10 50 Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extre...