Transistors
2SC4208, 2SC4208A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplif...
Transistors
2SC4208, 2SC4208A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A
5.0±0.2
Unit: mm
4.0±0.2
8.0±0.2
■ Features
0.7±0.1
0.7±0.2 13.5±0.5
Low collector-emitter saturation
voltage VCE(sat)
Output of 1 W is obtained with a complementary pair with 2SA1619 and 2SA1619A
Allowing supply with the radial taping
/ ■ Absolute Maximum Ratings Ta = 25°C
0.45+–00..12
0.45+–00..115
e Parameter
Symbol Rating
Unit
c type) Collector-base
voltage 2SC4208 VCBO
30
2.3±0.2
V
n d ge. ed (Emitter open)
2SC4208A
60
sta tinu Collector-emitter
voltage 2SC4208 VCEO
25
V
a e cycle iscon (Base open)
2SC4208A
50
life d, d Emitter-base
voltage (Collector open) VEBO
7
V
n u duct type Collector current
IC
500
mA
te tin Pro ued Peak collector current
ICP
1
A
four ntin Collector power dissipation
PC
1
W
ing isco Junction temperature
Tj
150
°C
in n follow ed d Storage temperature
Tstg −55 to +150 °C
a o includestype, plan ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
M is ntin tena Collector-base
voltage
isco ain (Emitter open)
2SC4208 VCBO 2SC4208A
IC = 10 µA, IE = 0
ce/D pe, m Collector-emitter
voltage
D nan e ty (Base open)
2SC4208 VCEO 2SC4208A
IC = 10 mA, IB = 0
inte anc Emitter-base
voltage (Collector open) Ma inten Forward current transfer ratio *1 ned ma Collector-emitter saturation
voltage (pla Base-emitter...