2SC4208

Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A 5.0±0.2 Unit: mm 4.0±0.2 8.0±0.2 ■ Features 0.7±0.1 0.7±0.2 13.5±0.5 Low collector-emitter saturation voltage VCE(sat) Output of 1 W is obtained with a complementary pair with 2SA1619 and 2SA1619A Allowing supply with the radial taping / ■ Absolute Maximum Ratings Ta = 25°C 0.45+–00..12 0.45+–00..115 e Parameter Symbol Rating Unit c type) Collector-base voltage 2SC4208 VCBO 30 2.3±0.2 V n d ge. ed (Emitter open) 2SC4208A 60 sta tinu Collector-emitter voltage 2SC4208 VCEO 25 V a e cycle iscon (Base open) 2SC4208A 50 life d, d Emitter-base voltage (Collector open) VEBO 7 V n u duct type Collector current IC 500 mA te tin Pro ued Peak collector current ICP 1 A four ntin Collector power dissipation PC 1 W ing isco Junction temperature Tj 150 °C in n follow ed d Storage temperature Tstg −55 to +150 °C a o includestype, plan ■ Electrical Characteristics Ta = 25°C ± 3°C c ued nce Parameter Symbol Conditions M is ntin tena Collector-base voltage isco ain (Emitter open) 2SC4208 VCBO 2SC4208A IC = 10 µA, IE = 0 ce/D pe, m Collector-emitter voltage D nan e ty (Base open) 2SC4208 VCEO 2SC4208A IC = 10 mA, IB = 0 inte anc Emitter-base voltage (Collector open) Ma inten Forward current transfer ratio *1 ned ma Collector-emitter saturation voltage (pla Base-emitter...