2SC4177 TRANSISTOR (NPN)
FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS Genera...
2SC4177 TRANSISTOR (NPN)
FEATURES High DC Current Gain Complementary to 2SA1611 High
Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 50 5 100 150 833 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃
SOT–323
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Base-emitter saturation
voltage Base-emitter
voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE* VCE(sat) VBE(sat) VBE fT Cob Test IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 0.55 250 3 90 conditions Min 60 50 5 100 100 600 0.3 1 0.65 V V V MHz pF Typ Max Unit V V V nA nA
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK RANGE MARKING L4 90–180 L4 L5 135–270 L5 L6 200–400 L6 L7 300–600 L7
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.da...