2SC4164

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4164 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 25 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 1.75 W 70 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4164 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 6A; IB1= 0.6A, IB2= -2.4A, L= 500μH, clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 0.8 V VBE(sat) Base-Emi...