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2SC4157 Datasheet

Part Number 2SC4157
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4157 Datasheet2SC4157 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High VCEO ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAM.

  2SC4157   2SC4157






Part Number 2SC4157
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4157 Datasheet2SC4157 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4157 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO .

  2SC4157   2SC4157







SILICON POWER TRANSISTOR

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High VCEO ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 450 8 10 20 5 100 150 -55~150 UNIT V V V A A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=8V; IC=0 IC=5A ; VCE=5V 15 MIN 450 600 2SC4157 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 1.0 2.0 100 1.0 V V µA mA Switching times tr tstg tf Rise time Storage time Fall time VCC<200V IB1=-IB2=0.5A ; RL=40> .


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