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2SC4152 Datasheet

Part Number 2SC4152
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Power Transistors
Datasheet 2SC4152 Datasheet2SC4152 Datasheet (PDF)

Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25.

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Part Number 2SC4159
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 2SC4152 Datasheet2SC4159 Datasheet (PDF)

2SC4159 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features 。 High voltage. / Applications , 100W 。 High voltage switching, AF 100W driver applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60~120 E 100~200 http://www.fsbrec.com 1/6 2SC4159 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) .

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Part Number 2SC4159
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SC4152 Datasheet2SC4159 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V.

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Part Number 2SC4159
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistors
Datasheet 2SC4152 Datasheet2SC4159 Datasheet (PDF)

Ordering number:EN2535 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volta.

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Part Number 2SC4157
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4152 Datasheet2SC4157 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4157 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO .

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Part Number 2SC4157
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4152 Datasheet2SC4157 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High VCEO ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAM.

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Silicon NPN Power Transistors

Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 1400 1400 700 5 1.0 0.3 20 2 150 –55 to +150 Unit V V V V A A W ˚C ˚C 16.7±0.3 14.0±0.5 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO ICP IC PC Tj Tstg Solder Dip s Absolute Maximum Ratings 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCER VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = 1100V, IE = 0 VEB = 4V, IC = 0 IC = 1mA, RBE = 100Ω IC = 1mA, IB = 0 IE = 1mA, IC = 0 VCE =.


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