Transistors
2SC4132 / 2SD1857
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
zFeatures 1) High breakdown voltage. (...
Transistors
2SC4132 / 2SD1857
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
zFeatures 1) High breakdown
voltage. (BVCEO = 120V) 2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base
voltage
VCBO
120
Collector-emitter
voltage
VCEO
120
Emitter-base
voltage
VEBO
5
Collector current
IC 2 ICP 3
Collector power dissipation
2SC4132 2SD1857
PC
0.5 2 1
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
*1 Single pulse Pw = 10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board.
zPackaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
* Denotes hFE
2SC4132 2SD1857
MPT3
ATV
PQR
CB*
T100
PQR −
TV2
1000
2500
zExternal dimensions (Unit : mm)
Unit V V V A
A *1 *2
W
°C °C
2SC4132
ROHM : MPT3 EIAJ : SC-62
4.0 1.0 2.5 0.5
(1) (2) (3)
3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6
4.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
2SD1857
6.8 2.5
1.0 0.9 14.5 4.4
0.65Max.
0.5 (1) (2) (3)
2.54 2.54
1.05 0.45 Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation
voltage DC current transfer ratio
Transiti...