TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4118
Audio Frequency Low Power Amplifier Applications Dri...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4118
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC4118
Unit: mm
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
35
V
Collector-emitter
voltage
VCEO
30
V
Emitter-base
voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation Junction temperature
PC
100
mW
JEDEC
―
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/
voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1987-01
1
2014-03-01
2SC4118
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ....