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2SC4115E Datasheet

Part Number 2SC4115E
Manufacturers Jiangsu Changjiang Electronics
Logo Jiangsu Changjiang Electronics
Description TRANSISTOR
Datasheet 2SC4115E Datasheet2SC4115E Datasheet (PDF)

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR C WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E.

  2SC4115E   2SC4115E






Part Number 2SC4115S
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet 2SC4115E Datasheet2SC4115S Datasheet (PDF)

Elektronische Bauelemente 2SC4115S 3 A , 40 V NPN Plastic-Encapsulated Transistor FEATURES High Current Capability High DC Current Gain Small Package RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS Audio Amplifier Applications AM Amplifier Applications CLASSIFICATION OF hFE Product-Rank 2SC4115S-Q 2SC4115S-R Range 120~270 180~390 2SC4115S-S 270~560 TO-92S REF. A B C D E F G H J K L Millimeter Min. Max. 3.90 4.10 3.05 3.25 1.42 1.62 15.1 15.5 2.97 3..

  2SC4115E   2SC4115E







Part Number 2SC4115S
Manufacturers Rohm
Logo Rohm
Description Low Frequency Transistor
Datasheet 2SC4115E Datasheet2SC4115S Datasheet (PDF)

Transistors Low Frequency Transistor (20V, 3A) 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-237-C74) 243 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2150 / 2SC4115S / 2SD2264 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE.

  2SC4115E   2SC4115E







Part Number 2SC4115-HF
Manufacturers Kexin
Logo Kexin
Description NPN Transistors
Datasheet 2SC4115E Datasheet2SC4115-HF Datasheet (PDF)

SMD Type NPN Transistors 2SC4115-HF Transistors ■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=20V ● Complements to 2SA1585-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Rang.

  2SC4115E   2SC4115E







Part Number 2SC4115
Manufacturers GME
Logo GME
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC4115E Datasheet2SC4115 Datasheet (PDF)

NPN Epitaxial Planar Silicon Transistor FEATURES  Low VCE(sat). Pb Lead-free VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)  Excellent current gain characteristics.  Complements to 2SA1585. Production specification 2SC4115 ORDERING INFORMATION Type No. Marking 2SC4115 4115G/4115R/4115S SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol.

  2SC4115E   2SC4115E







TRANSISTOR

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR C WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E B CFQ B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 150 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage* Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 290 25 V MHz pF TYP MAX UNIT V V V µA µA IC= 50µA , IE=0 IC= 1mA , IB=0 IE=50µA, IC=0 VCB=30V , VCE=2 V, IE=0 IC= 0.1A VEB= 5V , IC=0 IC= 2A, IB=0.1A VCE=2V, IC=0.5 A f=100MHz VCB=10V,IE=0,f=1MHz R 180-390 fT Cobo Q 120-270 CLASSIFICATION OF.


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