2SC4104

Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Collector Time Constant Output Capacitance Symbol Conditions ICBO IEBO hFE fT rbb',cc Cob VCB=(–)40V, IE=0 VEB=(–)3V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)20mA, IB=(–)2mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 * : The 2SA1580/2SC4104 are classified by 10mA hFE as follows : 60 3 120 90 4 180 135 5 270 Marking 2SA1580 : QL 2SC4104 : YY hFE rank : 3,4,5 C : Collector B : Base E ...