DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68139
/
2SC4094 JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON E...
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68139
/
2SC4094 JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
2.9±0.2 UT (1.8) 0.85 0.95
1.1−+00..12 PHASE0.8 0 to 0.1
DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal
amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
0.4
2
PACKAGE DIMENSIONS (Units: mm)
+0.1 −0.05
+0.1 −0.05
2.8
+0.2 −0.3
1.5
+0.2 −0.1
3
0.4
(1.9)
+0.1O
−0.05
FEATURES NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base
Voltage
VCBO
20
V
Collector to Emitter
Voltage VCEO
10
V
Emitter to Base
Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
50
Gain Bandwidth Product
fT
9
Feed-Back Capacitance Insertion Power Gain
Cre
0.25
S21e2
13
15
Maximum Available Gain
MAG
17
Noise Figure
NF
1.2
MAX....
