Ordering number:EN3171
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1575/2SC4080
High-Frequency Amplifier, Wide-Band...
Ordering number:EN3171
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1575/2SC4080
High-Frequency Amplifier, Wide-Band Amplifier Applications
Features
· High fT. · High breakdown
voltage. · Small reverse transfer capacitance and excellent
high-frequency characteristic. · Adoption of FBET process.
Package Dimensions
unit:mm 2038
[2SA1575/2SC4080]
E : Emitter C : Collector B : Base
( ) : 2SA1575
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Conditions Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)60mA VCE=(–)30V, IC=(–)30mA VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation
Voltage Base-to-Emitter Saturation
Voltage Collector-to-Base Breakdown
Voltage Collector-to-Emitter Breakdown
Voltage Emitter-to-Base Breakdown
Voltage
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0
* : The 2SA1575/2SC4080 are classifie...