isc Silicon NPN Power Transistor
DESCRIPTION ·High voltage and large current capacity ·Ultrahigh-speed switching ·Small...
isc Silicon NPN Power Transistor
DESCRIPTION ·High
voltage and large current capacity ·Ultrahigh-speed switching ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SA1552
APPLICATIONS ·Converters , inverters and color TV audio output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
180
V
VCEO
Collector-Emitter
Voltage
160
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
2.5
A
15 W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC4027
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation
Voltage IC= 0.5A; IB= 50mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= 0.5A; IB= 50mA
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10uA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 10mA; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product I...
