2SC4003

isc Silicon NPN Power Transistor DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.2 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4003 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB=4V; IC= 0 hFE DC Current Gain IC= 50mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V  hFE Classifications D E 60-120 100-200 2SC4003 MIN TYP. MAX UNIT 0.6 V 1.0 V 400 V 400 V 5 V 0.1 uA 0.1 uA 60 200 70 MHz isc Silicon NPN Power Transistor 2SC4003 isc website：www.i...