isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min.) ·Wide Area of Sa...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown
Voltage-
: V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
900
V
VCES
Collector-Emitter
Voltage
900
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
3
A
3 W
80
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3981
·
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V; f= 1MHz
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Tim...