2SC3980A

Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 0.7 q 16.2±0.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 1000 900 1000 800 7 6 4 2 70 3 150 –55 to +150 Unit V 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3980 2SC3980A 2SC3980 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 emitter voltage 2SC3980A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V V A A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3980 2SC3980A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 I...