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2SC3980 Datasheet

Part Number 2SC3980
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3980 Datasheet2SC3980 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitt.

  2SC3980   2SC3980






Part Number 2SC3980
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3980 Datasheet2SC3980 Datasheet (PDF)

Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 / ■ Absolute Maxim.

  2SC3980   2SC3980







NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 3 W 70 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3980 · isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3980 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 2A; VCE= 5V 6 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V; f= 1.


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