isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min.) ·Wide Area of Saf...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown
Voltage-
: V(BR)CBO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
800
V
VCES
Collector-Emitter
Voltage
800
V
VCEO
Collector-Emitter
Voltage
500
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
5
A
3 W
100
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3975
·
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC3975
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA; IB= 0
500
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 6A; IB= 1.2A
1.0
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 6A; IB= 1.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V...