Transistors
2SC3941
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification For small...
Transistors
2SC3941
Silicon NPN triple diffusion planar type
For high breakdown
voltage general amplification For small TV video output Complementary to 2SA1858
5.0±0.2
Unit: mm 4.0±0.2
8.0±0.2
■ Features
0.7±0.2 13.5±0.5
0.7±0.1
High collector-emitter
voltage (Base open) VCEO High transition frequency fT Allowing supply with the radial taping
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base
voltage (Emitter open) VCBO
300
2.3±0.2
V
n d tage. ued Collector-emitter
voltage (Base open) VCEO
300
V
le s ntin Emitter-base
voltage (Collector open) VEBO
7
V
a e cyc isco Collector current
IC
70
mA
n u t life ed, d Peak collector current
ICP
100
mA
duc typ Collector power dissipation
PC
1
W
te tin r Pro ued Junction temperature
Tj
150
°C
fou ontin Storage temperature
Tstg −55 to +150 °C
0.45+–00..12
(1.27)
(1.27)
0.45+–00..115
123
1: Emitter 2: Collector
2.54±0.15
3: Base
TO-92NL-A1 Package
in n es follopwliannged disc ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-emitter
voltage (Base open) VCEO IC = 100 µA, IB = 0
300
V
tinu nan Emitter-base
voltage (Collector open) VEBO IE = 1 µA, IC = 0
7
V
M is iscon ainte Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
2
µA
e/D e, m Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
30
220
D anc typ Collector-emitter s...
