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2SC3934 Datasheet

Part Number 2SC3934
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3934 Datasheet2SC3934 Datasheet (PDF)

Transistors 2SC3934 Silicon NPN epitaxial planar type For high-frequency wide-band low-noise amplification Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (E.

  2SC3934   2SC3934






Part Number 2SC3939
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3934 Datasheet2SC3939 Datasheet (PDF)

Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 5.0±0.2 Unit: mm 4.0±0.2 8.0±0.2 ■ Features 0.7±0.2 13.5±0.5 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 0.7±0.1 W output amplifier • Allowing supply with the radial taping / ■ Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 8.

  2SC3934   2SC3934







Part Number 2SC3938G
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC3934 Datasheet2SC3938G Datasheet (PDF)

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3938G Silicon NPN epitaxial planar type For high-speed switching ■ Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and • Code SMini3-F2 automatic insertion through the tape packing • Marking Symbol: 2Y • Pin Name ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO.

  2SC3934   2SC3934







Part Number 2SC3938
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3934 Datasheet2SC3938 Datasheet (PDF)

Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing 1 2 ■ Absolute Maximum Ratings Ta = 25°C (0.65) (0.65) Parameter Symbol Rating Unit 1.3±0.1 /2.0±0.2 Collector-base voltage (Emitter open) VCBO 40 V 10˚ 0.2±0.1 .

  2SC3934   2SC3934







Part Number 2SC3937G
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC3934 Datasheet2SC3937G Datasheet (PDF)

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3937G Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features ■ Package • Low noise figure NF • Code • High forward transfer gain S21e2 SMini3-F2 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment • Marking Symbol: 2W • Pin Name and automatic insertion through the tape packing and the maga- 1. Base zine packing 2. Emitter /3. Collector.

  2SC3934   2SC3934







Part Number 2SC3937
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3934 Datasheet2SC3937 Datasheet (PDF)

Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm (0.425) 0.3+–00..01 0.15+–00..0150 ■ Features 3 • Low noise figure NF 1.25±0.10 2.1±0.1 5˚ • High forward transfer gain S21e2 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment 1 2 and automatic insertion through the tape packing and the magazine packing (0.65) (0.65) 1.3±0.1 /2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C 10˚ e e) Parameter.

  2SC3934   2SC3934







Silicon NPN Transistor

Transistors 2SC3934 Silicon NPN epitaxial planar type For high-frequency wide-band low-noise amplification Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 12 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2.5 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 30 mA lifecy , dis Peak collector current ICP 50 mA n u duct typed Collector power dissipation PC 150 mW te tin Pro ed Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 1U in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 100 nA tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 1 µA M is con inten Forward current transfer ratio hFE VCE = 10 V, IC = 10 mA 40  /Dis ma Transition frequency fT VCE = 10 V, IC = 10 mA, f = 0.8 GHz 4..


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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