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2SC3912

Sanyo Semicon Device

PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN2159A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias...


Sanyo Semicon Device

2SC3912

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Description
Ordering number:EN2159A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias Resistance) Application · Switching circuits, inverters circuits, inferface circuits, driver circuits. Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2018A [2SA1518/2SC3912] ( ) : 2SA1518 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO ICEO IEBO hFE fT VCB=(–)40V, IE=0 VCE=(–)40V, IB=0 VEB=(–)5V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)5mA Output Capacitance Cob VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio VCE(sat) V(BR)CBO V(BR)CEO VI(off) VI(on) R1 IC=(–)20mA, IB=(–)1mA IC=(–)10µA, IE=0 IC=(–)100µA, RBE=∞ VCE=(–)5V, IC=(–)100µA VCE=(–)0.2V, IC=(–)10mA R1/R2 C : Collector B : Base E : Emitter SANYO : CP Ratings (–)50 (–)50 (–)10 (–)500 (–)800 200 150 –55 to +150 ...




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