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2SC3904 Datasheet

Part Number 2SC3904
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3904 Datasheet2SC3904 Datasheet (PDF)

Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.8 –0.3 +0.2 s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1.1 –0.1 (Ta=25˚C) Ratings 15 10 2 65 200 150 –55 ~ +150 Unit V V V mA mW ˚C .

  2SC3904   2SC3904






Part Number 2SC3908
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description NPN EPITAXIAL PLANAR TYPE TRANSISTOR
Datasheet 2SC3904 Datasheet2SC3908 Datasheet (PDF)

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  2SC3904   2SC3904







Part Number 2SC3907S
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3904 Datasheet2SC3907S Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1516S ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Vo.

  2SC3904   2SC3904







Part Number 2SC3907
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3904 Datasheet2SC3907 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1516 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Vol.

  2SC3904   2SC3904







Part Number 2SC3907
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3904 Datasheet2SC3907 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3907 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB.

  2SC3904   2SC3904







Part Number 2SC3906K
Manufacturers Kexin
Logo Kexin
Description High-voltage Amplifier Transistor
Datasheet 2SC3904 Datasheet2SC3906K Datasheet (PDF)

SMD Type High-voltage Amplifier Transistor 2SC3906K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO.

  2SC3904   2SC3904







Silicon NPN Transistor

Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.8 –0.3 +0.2 s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1.1 –0.1 (Ta=25˚C) Ratings 15 10 2 65 200 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 3S s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 0.8GHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 7mA, f = 1.5GHz 7 50 7.0 120 8.5 0.6 9 10 2.2 3 1 min typ max 1 1 300 GHz pF dB dB dB Unit µA µA 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 0.16 –0.06 +0.2 +0.1 0.4 –0.05 +0.1 High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 1.45 1 Transistor PC — Ta 240 30 .


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